Characterization of Resistive Dividing Comparator in Deep Sub-Micron Region

Dhanisha N. Kapadia; Priyesh P. Gandhi

In this paper Resistive Dividing comparator along with the Buffer stage in 130nm and 90nm technologies is presented. The supply voltage VDD for this comparator is 1.3v and 1v for 130nm and 90nm respectively. Various analysis of different characteristics of the comparator has been carried out such as offset, ICMR, propagation delay, speed, power dissipation in both the technologies and the result has been compared for both the technologies. The speed of the comparator as measured from the simulation results is 1.06GHz and 1.23 GHz along with the power dissipation of 167mV and 71mV for 130nm and 90nm CMOS process respectively.

Select Volume / Issues:

• Volume 3 Issue 6, Nov. 2012

Year:

2012

Type of Publication:

Article

Keywords:

Buffer stage; latch comparator; resistive dividing network

Journal:

IJECCE

Volume:

3

Number:

6

Pages:

1561-1564

Month:

November