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Ultra Low Power 14XM FinFET's Process-a Radical New Approach to Transistors
-
Suhas K. V.
- FinFET technology is a radical new technology that has been proposed by the industry to overcome large leakage power occurring in low power VLSI circuits. In this paper, the working of the basic MOSFET, condition of operations for any transistor and the FinFET along with its structure is described. This paper mainly covers how FinFET can be an advantage compared to basic MOSFET and how leakage can be reduced in FinFET is explained with the comparison of basic MOSFET. The fabrication steps are briefly discussed.
- Select Volume / Issues:
- Year:
- 2013
- Type of Publication:
- Article
- Keywords:
- Basic MOSFET; FinFET; FinFET fabrication; Regions of Operation
- Journal:
- IJECCE
- Volume:
- 4
- Number:
- 3
- Pages:
- 810-812
- Month:
- May
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