O}utput characteristics of Short Channel GaAs MESFET Using {MATLAB

Sanjay. C. Patil; B. K. Mishra

An analytical model for optically biased nonself- aligned and self-aligned short channel GaAs MESFETs is developed to show the photo effects on the Id–Vd characteristics, using Green’s function technique. When light radiation having photon energy equal to or greater than the band gap energy of GaAs is allowed to fall, the drain current increases significantly as compared to dark condition due to photoconductive effect in parasitic resistances and photovoltaic effect at the gate Schottky-barrier region.

Select Volume / Issues:

• Volume 3 Issue 6, Nov. 2012

Year:

2012

Type of Publication:

Article

Keywords:

MESFET; GaAs; Photogeneration of carriers; Photovoltaic effect; Photoconductive effect

Journal:

IJECCE

Volume:

3

Number:

6

Pages:

1303-1307

Month:

November